Variable width superblock addressing

ABSTRACT

Devices and techniques for variable width superblock addressing are described herein. A superblock width, specified in number of planes, is obtained. A superblock entry is created in a translation table of a NAND device. Here, the superblock entry may include a set of blocks, from the NAND device, that have the same block indexes across multiple die of the NAND device. The number of unique block indexes are equal to the number of planes and in different planes. A request, received from a requesting entity, is performed using the superblock entry. Performing the request includes providing a single instruction to multiple die of the NAND device and multiple data segments. Here, a data segment corresponds to a block in the set of blocks specified by a tuple of block index and die. A result of the request is then returned to the requesting entity.

PRIORITY APPLICATION

This application is a U.S. National Stage Application under 35 U.S.C.371 from International Application No. PCT/CN2017/115869, filed Dec. 13,2017, which is incorporated herein by reference in its entirety.

BACKGROUND

Memory devices are typically provided as internal, semiconductor,integrated circuits in computers or other electronic devices. There aremany different types of memory, including volatile and non-volatilememory.

Volatile memory requires power to maintain its data, and includesrandom-access memory (RAM), dynamic random-access memory (DRAM), orsynchronous dynamic random-access memory (SDRAM), among others.

Non-volatile memory can retain stored data when not powered, andincludes flash memory, read-only memory (ROM), electrically erasableprogrammable ROM (EEPROM), static RAM (SRAM), erasable programmable ROM(EPROM), resistance variable memory, such as phase-change random-accessmemory (PCRAM), resistive random-access memory (RRAM), magnetoresistiverandom-access memory (MRAM), or 3D XPoint™ memory, among others.

Flash memory is utilized as non-volatile memory for a wide range ofelectronic applications. Flash memory devices typically include one ormore groups of one-transistor, floating gate or charge trap memory cellsthat allow for high memory densities, high reliability, and low powerconsumption.

Two common types of flash memory array architectures include NAND andNOR architectures, named after the logic form in which the basic memorycell configuration of each is arranged. The memory cells of the memoryarray are typically arranged in a matrix. In an example, the gates ofeach floating gate memory cell in a row of the array are coupled to anaccess line (e.g., a word line). In a NOR architecture, the drains ofeach memory cell in a column of the array are coupled to a data line(e.g., a bit line). In a NAND architecture, the drains of each memorycell in a string of the array are coupled together in series, source todrain, between a source line and a bit line.

Both NOR and NAND architecture semiconductor memory arrays are accessedthrough decoders that activate specific memory cells by selecting theword line coupled to their gates. In a NOR architecture semiconductormemory array, once activated, the selected memory cells place their datavalues on bit lines, causing different currents to flow depending on thestate at which a particular cell is programmed. In a NAND architecturesemiconductor memory array, a high bias voltage is applied to adrain-side select gate (SGD) line. Word lines coupled to the gates ofthe unselected memory cells of each group are driven at a specified passvoltage (e.g., Vpass) to operate the unselected memory cells of eachgroup as pass transistors (e.g., to pass current in a manner that isunrestricted by their stored data values). Current then flows from thesource line to the bit line through each series coupled group,restricted only by the selected memory cells of each group, placingcurrent encoded data values of selected memory cells on the bit lines.

Each flash memory cell in a NOR or NAND architecture semiconductormemory array can be programmed individually or collectively to one or anumber of programmed states. For example, a single-level cell (SLC) canrepresent one of two programmed states (e.g., 1 or 0), representing onebit of data.

However, flash memory cells can also represent one of more than twoprogrammed states, allowing the manufacture of higher density memorieswithout increasing the number of memory cells, as each cell canrepresent more than one binary digit (e.g., more than one bit). Suchcells can be referred to as multi-state memory cells, multi-digit cells,or multi-level cells (MLCs). In certain examples, MLC can refer to amemory cell that can store two bits of data per cell (e.g., one of fourprogrammed states), a triple-level cell (TLC) can refer to a memory cellthat can store three bits of data per cell (e.g., one of eightprogrammed states), and a quad-level cell (QLC) can store four bits ofdata per cell. MLC is used herein in its broader context, to can referto any memory cell that can store more than one bit of data per cell(i.e., that can represent more than two programmed states).

Traditional memory arrays are two-dimensional (2D) structures arrangedon a surface of a semiconductor substrate. To increase memory capacityfor a given area, and to decrease cost, the size of the individualmemory cells has decreased. However, there is a technological limit tothe reduction in size of the individual memory cells, and thus, to thememory density of 2D memory arrays. In response, three-dimensional (3D)memory structures, such as 3D NAND architecture semiconductor memorydevices, are being developed to further increase memory density andlower memory cost.

Such 3D NAND devices often include strings of storage cells, coupled inseries (e.g., drain to source), between one or more source-side selectgates (SGSs) proximate a source, and one or more drain-side select gates(SGDs) proximate a bit line. In an example, the SGSs or the SGDs caninclude one or more field-effect transistors (FETs) or metal-oxidesemiconductor (MOS) structure devices, etc. In some examples, thestrings will extend vertically, through multiple vertically spaced tierscontaining respective word lines. A semiconductor structure (e.g., apolysilicon structure) can extend adjacent a string of storage cells toform a channel for the storages cells of the string. In the example of avertical string, the polysilicon structure can be in the form of avertically extending pillar. In some examples the string can be“folded,” and thus arranged relative to a U-shaped pillar. In otherexamples, multiple vertical structures can be stacked upon one anotherto form stacked arrays of storage cell strings.

Memory arrays or devices can be combined together to form a storagevolume of a memory system, such as a solid-state drive (SSD), aUniversal Flash Storage (UFS™) device, a MultiMediaCard (MMC)solid-state storage device, an embedded MMC device (eMMC™), etc. An SSDcan be used as, among other things, the main storage device of acomputer, having advantages over traditional hard drives with movingparts with respect to, for example, performance, size, weight,ruggedness, operating temperature range, and power consumption. Forexample, SSDs can have reduced seek time, latency, or other delayassociated with magnetic disk drives (e.g., electromechanical, etc.).SSDs use non-volatile memory cells, such as flash memory cells toobviate internal battery supply requirements, thus allowing the drive tobe more versatile and compact.

An SSD can include a number of memory devices, including a number ofdies or logical units (e.g., logical unit numbers or LUNs), and caninclude one or more processors or other controllers performing logicfunctions required to operate the memory devices or interface withexternal systems. Such SSDs can include one or more flash memory die,including a number of memory arrays and peripheral circuitry thereon.The flash memory arrays can include a number of blocks of memory cellsorganized into a number of physical pages. In many examples, the SSDswill also include DRAM or SRAM (or other forms of memory die or othermemory structures). The SSD can receive commands from a host inassociation with memory operations, such as read or write operations totransfer data (e.g., user data and associated integrity data, such aserror data and address data, etc.) between the memory devices and thehost, or erase operations to erase data from the memory devices.

BRIEF DESCRIPTION OF THE DRAWINGS

In the drawings, which are not necessarily drawn to scale, like numeralscan describe similar components in different views. Like numerals havingdifferent letter suffixes can represent different instances of similarcomponents. The drawings illustrate generally, by way of example, butnot by way of limitation, various embodiments discussed in the presentdocument.

FIG. 1 illustrates an example of an environment including a memorydevice.

FIG. 2 illustrates an example of superblocks.

FIG. 3 illustrates an example of variable width superblocks.

FIG. 4 illustrates an example of writing to a variable width superblock.

FIG. 5 illustrates a flowchart of a method for variable width superblockaddressing.

FIG. 6 is a block diagram illustrating an example of a machine uponwhich one or more embodiments can be implemented.

DETAILED DESCRIPTION

Although NAND devices permit write and read addressing at a page leveland erasure addressing at a block level, there are some practicaldifficulties in such fine grained resolution. These difficulties mayinclude addressing overhead for a variety of tasks and operations,including maintenance of flash translation layer (FTL) tables. Toaddress these issues, blocks have been aggregated into a single logicalentity to which data is written. Traditionally, the aggregated blocksincluded blocks from every plane in every die of a NAND array. Thisarrangement provide some benefits, such as parallel execution of a writecommand across die.

The aggregated block concept permits tracking fewer storage units,relieving pressure on FTL tables and management. This can be importantin resource limited devices, such as managed NAND, where availableworking memory (e.g., random access memory (RAM) holding system state)is limited. However, as die count and plane count increase, theaggregated block unit storage becomes large. The following tableillustrates how the size of aggregated block units increase with planeand die count increases:

B1X B2X Page size (KB) 16 16 Planes 2 4 Pages per block 2304 5184User/Spare/Redundant 456/22/24 204/18/14 blocks per plane Fixed widthsuperblock 288 1296 size (MB) of 4-die system

A few problems emerge as the aggregated block unit size grows. Forexample, the time to refresh the aggregated blocks becomes longer. Also,for read disturb handling, data retention handling, or asynchronouspower loss handling, moving data from one aggregated block unit toanother takes longer. These maintenance operations impact other NANDoperations on these blocks and can lead to increased latency to thedevice (e.g., it takes longer for the device to respond to a host reador write command).

In addition to increased times to perform maintenance on the NANDdevices, large aggregates of blocks may also lead to wasted storage whenan aggregated block unit is used as the smallest effective addressableentity in managed NAND devices. For example, the device may reservespace for usage apart from user data or meta data, such as reservingrefresh storage as a temporary space used during data copies—e.g., for arefresh, data is copied from source storage to refresh storage, thesource storage is erased, and then the data is copied back from therefresh storage to the source storage. Another example occurs when thereis program error. Here, the device replaces a bad storage section (e.g.,aggregated block unit) with a good one, using a reserved storage sectionto replace the bad section. Large aggregated block units on reserve forbad block replacement reduce the effective over provisioning (OP) forthe NAND device (e.g., fewer reserves can be used and still meet storageuse goals for the device). Thus, if there are only around 200 blocks ina plane (e.g., B2X in Table 1), one block reservation means 0.5% OPloss. Less OP will impact system performance and endurance.

A variable width superblock can address the aggregate block unitproblems noted above while allowing for efficient FTL in a managed NANDdevice. The aggregated block unit described above spans all planes ofall die in a NAND array. This aggregated block unit has been called asuperblock at times. However, it is differentiated from the termsuperblock as used herein. As used herein, superblock refers to acombination of blocks that span at least two die. The blocks acrossthese die have the same address within a die. Thus, a block A in die Zis combined with a block A in die Y to form a superblock. Due to thisdefinition, some embodiments may be considered a “sub-superblock” whencompared to the traditional use of “superblock.” Thus, unlike aggregatedblock units, a superblock can omit blocks from some planes on die. Forexample, on NAND array with two die that each have four planes, anaggregated block unit would include a block from each plane (all four)on each die (all two) whereas a superblock can comprise blocks from lessthan all planes (e.g., two planes) on each die (all two). The number ofplanes used in a superblock are its width. While any number of planesmay be used to construct superblocks, there may be advantages toselecting fractions of an aggregated block unit for a superblock width.For example, a single bit may be used to signal a high super block or alow superblock with respect to an aggregated block unit to define asuperblock that is half the width of the aggregated block unit. In thisexample, low superblock may be the first half of planes as measured byplane index and the high superblock is the remaining planes.

Using superblocks as a basic operational unit in the NAND deviceprovides the efficient resource management discussed above with respectto aggregated block units while permitting more efficient maintenanceoperations (e.g., reduced latency and time to perform the operations)and effective device OP.

Superblocks provide a number of optimization opportunities by allowingfor variable widths. Large superblocks provide higher bandwidthresulting in better sequential read and write performance. However, insome scenarios, performance is hampered by a host interface and not NANDarray bandwidth, such as in Serial Advanced Technology Attachment(SATA), Peripheral Component Interconnect Express (PCIe), orNon-Volatile Memory Express (NVMe) host interfaces. In these scenarios,superblock width is reduced to lower maintenance operation times, lowerOp loss, etc., without impacting device throughput from the host.

With these performance tradeoffs, superblock widths can be tailored tothe type of data being stored. For example, meta data—such as FTL tableand other system information data—is often less sensitive to bandwidthissues than is user data. Thus, smaller width superblocks can be used tostore meta data while full width (e.g., aggregated block unit sized)superblocks store user data. Additional details and examples aredescribed below.

FIG. 1 illustrates an example of an environment 100 including a hostdevice 105 and a memory device 110 configured to communicate over acommunication interface. The host device 105 or the memory device 110can be included in a variety of products 150, such as Internet of Things(IoT) devices (e.g., a refrigerator or other appliance, sensor, motor oractuator, mobile communication device, automobile, drone, etc.) tosupport processing, communications, or control of the product 150.

The memory device 110 includes a memory controller 115 and a memoryarray 120 including, for example, a number of individual memory die(e.g., a stack of three-dimensional (3D) NAND die). In 3D architecturesemiconductor memory technology, vertical structures are stacked,increasing the number of tiers, physical pages, and accordingly, thedensity of a memory device (e.g., a storage device). In an example, thememory device 110 can be a discrete memory or storage device componentof the host device 105. In other examples, the memory device 110 can bea portion of an integrated circuit (e.g., system on a chip (SOC), etc.),stacked or otherwise included with one or more other components of thehost device 105.

One or more communication interfaces can be used to transfer databetween the memory device 110 and one or more other components of thehost device 105, such as a Serial Advanced Technology Attachment (SATA)interface, a Peripheral Component Interconnect Express (PCIe) interface,a Universal Serial Bus (USB) interface, a Universal Flash Storage (UFS)interface, an eMMC™ interface, or one or more other connectors orinterfaces. The host device 105 can include a host system, an electronicdevice, a processor, a memory card reader, or one or more otherelectronic devices external to the memory device 110. In some examples,the host 105 can be a machine having some portion, or all, of thecomponents discussed in reference to the machine 600 of FIG. 6.

The memory controller 115 can receive instructions from the host 105,and can communicate with the memory array 120, such as to transfer datato (e.g., write or erase) or from (e.g., read) one or more of the memorycells, planes, sub-blocks, blocks, or pages of the memory array 120. Thememory controller 115 can include, among other things, circuitry orfirmware, including one or more components or integrated circuits. Forexample, the memory controller 115 can include one or more memorycontrol units, circuits, or components configured to control accessacross the memory array 120 and to provide a translation layer betweenthe host 105 and the memory device 110.

The memory controller 115 may implement a flash translation layer (FTL)using superblocks. The memory controller 115 is arranged to obtain asuperblock width. The memory controller 115 may receive the width (e.g.,from the host 105, from a boot-process, etc.) or may retrieve the width(e.g., from the array 120, from an external storage device, read-onlymemory, etc.). The width specifies a number of die planes. Thus, a widthof one is one die plane, a width of two is two die planes, etc.

In an example, the number of planes are specified as a percentage. Here,the percentage is with respect to a total number of planes in a die.Thus, if a die has four planes, a 25% width is one plane. In an example,the percentage is fifty percent. In an example, the number of planes isless than planes in a die of the memory device 110 (e.g., within thearray 120). This is in contrast to a complete superblock that includes ablock at a unique index for every plane in the die and spans all die ofthe memory device 110. A complete superblock operates like an aggregatedblock unit but differs because it is based on a defined width, obtainedby the memory controller 115. In an example, user data is stored in acomplete superblock and NAND device meta data is stored in thesuperblock. This mixed use of superblock widths allows for flexiblemanagement of device bandwidth and latency or OP reductions depending onanticipated or dynamically measured (e.g., during device operation)usage.

In an example, the superblock is one of a set of superblocks. Here, theset of superblocks include a block at a unique index for every plane inthe die across all die of the memory device 110. Thus, given fourplanes, there are four superblocks. A first superblock with a block inplane one of each die, a second superblock with a block in plane two ofeach die, a third super block with a block in plane three of each die,and a fourth superblock with a block in plane four of each die. Theblocks for a superblock have the same intra-die index across die. Forexample, if a superblock has block zero in die zero, it also has blockzero in die one, in die two, and in die three. In an example, thesuperblock is differentiated from other members in the set ofsuperblocks by a position of planes represented in the set of blocks.Here, the position of the planes is measured by an index, such that eachplane is numbered (e.g., 0-N) within a die. In an example, the set ofsuperblocks has two members and the position of planes is high or low,high corresponding to one half of the planes with high indices and lowcorresponding to remaining planes on the die. As noted above, this timeof arrangement may provide efficiency by using allowing the superblockto be addressed by a block index (e.g., block one) and a single bit toindicate whether the high or low planes constitute the superblock.Because block indexes may cross planes, a subsequent plane blockdesignation can be derived from a single block index designation by aset distribution. For example, a first block in plane zero may have anindex of zero while a first block in plane one may have an index of fivehundred and three. Here, the super block can be referenced by the lowbit (e.g., set to zero) and a block index of zero, which is converted bythe distribution to be blocks zero and five hundred and three, forexample.

The memory controller 115 is arranged to create a superblock entry inthe translation table (e.g., table 13) of the memory device 110. Here,the superblock entry includes a set of blocks from the array 120. Theset of blocks have block indexes that are the same across multiple dieof the array 120. The number of unique block indexes is equal to thenumber of planes and in different planes. Thus, a given superblock iscomposed of blocks in different planes of a die, each block having anindex specific to the die. The same superblock has blocks with the sameindices in all other die of the array 120. As noted above, some membersof the set of blocks can be defined by a distribution, or otherfunction, based off of one block index. Thus, the entry can be a singleblock index and a width, the distribution defining the remaining blockindexes that comprise the set of blocks within one die, the blockindexes also applying to the remaining dies.

The memory controller 115 is arranged to receive a request from arequesting entity, such as the host 105. In an example, the request is awrite. In an example, the request is a read. In an example, the requestis a refresh. In an example, the request is garbage collection. Withrespect to the refresh or garbage collection requests, the memorycontroller 115 may receive the request from itself, for example, via atrigger, self-diagnostic, or the like (e.g., as performed by the memorymanager 125). The memory controller 115 is arranged to perform using thesuperblock entry. To accomplish this, the memory controller 115 isarranged to provide a single instruction to multiple die of the array120 along with multiple data segments. Here, a data segment in themultiple data segments corresponds to a block in the set of blocksspecified by a tuple of block index and die. This parallelism increasesarray 120 throughput, and thus increases performance of the memorydevice 110. The memory controller 115 is arranged to then return theresult of performing the request to the requesting entity.

The memory manager 125 can include, among other things, circuitry orfirmware, such as a number of components or integrated circuitsassociated with various memory management functions. For purposes of thepresent description example memory operation and management functionswill be described in the context of NAND memory. Persons skilled in theart will recognize that other forms of non-volatile memory can haveanalogous memory operations or management functions. Such NANDmanagement functions include wear leveling (e.g., garbage collection orreclamation), error detection or correction, block retirement, or one ormore other memory management functions. The memory manager 125 can parseor format host commands (e.g., commands received from a host) intodevice commands (e.g., commands associated with operation of a memoryarray, etc.), or generate device commands (e.g., to accomplish variousmemory management functions) for the array controller 135 or one or moreother components of the memory device 110.

The memory manager 125 can include a set of management tables 130configured to maintain various information associated with one or morecomponent of the memory device 110 (e.g., various information associatedwith a memory array or one or more memory cells coupled to the memorycontroller 115). For example, the management tables 130 can includeinformation regarding block age, block erase count, error history, orone or more error counts (e.g., a write operation error count, a readbit error count, a read operation error count, an erase error count,etc.) for one or more blocks of memory cells coupled to the memorycontroller 115. In certain examples, if the number of detected errorsfor one or more of the error counts is above a threshold, the bit errorcan be referred to as an uncorrectable bit error. The management tables130 can maintain a count of correctable or uncorrectable bit errors,among other things. In an example, the management tables 103 may includetranslation tables or a L2P mapping.

The array controller 135 can include, among other things, circuitry orcomponents configured to control memory operations associated withwriting data to, reading data from, or erasing one or more memory cellsof the memory device 110 coupled to the memory controller 115. Thememory operations can be based on, for example, host commands receivedfrom the host 105, or internally generated by the memory manager 125(e.g., in association with wear leveling, error detection or correction,etc.).

The array controller 135 can include an error correction code (ECC)component 140, which can include, among other things, an ECC engine orother circuitry configured to detect or correct errors associated withwriting data to or reading data from one or more memory cells of thememory device 110 coupled to the memory controller 115. The memorycontroller 115 can be configured to actively detect and recover fromerror occurrences (e.g., bit errors, operation errors, etc.) associatedwith various operations or storage of data, while maintaining integrityof the data transferred between the host 105 and the memory device 110,or maintaining integrity of stored data (e.g., using redundant RAIDstorage, etc.), and can remove (e.g., retire) failing memory resources(e.g., memory cells, memory arrays, pages, blocks, etc.) to preventfuture errors.

The memory array 120 can include several memory cells arranged in, forexample, a number of devices, planes, sub-blocks, blocks, or pages. Asone example, a 48 GB TLC NAND memory device can include 18,592 bytes (B)of data per page (16,384+2208 bytes), 1536 pages per block, 548 blocksper plane, and 4 or more planes per device. As another example, a 32 GBMLC memory device (storing two bits of data per cell (i.e., 4programmable states)) can include 18,592 bytes (B) of data per page(16,384+2208 bytes), 1024 pages per block, 548 blocks per plane, and 4planes per device, but with half the required write time and twice theprogram/erase (P/E) cycles as a corresponding TLC memory device. Otherexamples can include other numbers or arrangements. In some examples, amemory device, or a portion thereof, can be selectively operated in SLCmode, or in a desired MLC mode (such as TLC, QLC, etc.).

In operation, data is typically written to or read from the NAND memorydevice 110 in pages, and erased in blocks. However, one or more memoryoperations (e.g., read, write, erase, etc.) can be performed on largeror smaller groups of memory cells, as desired. The data transfer size ofa NAND memory device 110 is typically referred to as a page, whereas thedata transfer size of a host is typically referred to as a sector.

Although a page of data can include a number of bytes of user data(e.g., a data payload including a number of sectors of data) and itscorresponding metadata, the size of the page often refers only to thenumber of bytes used to store the user data. As an example, a page ofdata having a page size of 4 KB can include 4 KB of user data (e.g., 8sectors assuming a sector size of 512 B) as well as a number of bytes(e.g., 32 B, 54 B, 224 B, etc.) of metadata corresponding to the userdata, such as integrity data (e.g., error detecting or correcting codedata), address data (e.g., logical address data, etc.), or othermetadata associated with the user data.

Different types of memory cells or memory arrays 120 can provide fordifferent page sizes, or can require different amounts of metadataassociated therewith. For example, different memory device types canhave different bit error rates, which can lead to different amounts ofmetadata necessary to ensure integrity of the page of data (e.g., amemory device with a higher bit error rate can require more bytes oferror correction code data than a memory device with a lower bit errorrate). As an example, a multi-level cell (MLC) NAND flash device canhave a higher bit error rate than a corresponding single-level cell(SLC) NAND flash device. As such, the MLC device can require moremetadata bytes for error data than the corresponding SLC device.

FIG. 2 illustrates an example of superblocks. Superblock 245 andsuperblock 250 are both complete, or full width, superblocks, spanningall four planes of all four die. To illustrate the block indexrelationship between planes and die, some blocks in each superblock arenoted in FIG. 2. For example, superblock 245 includes blocks 205 and 215of planes 225 and 230 respectively. As noted above, block indexes maynot start over between planes. Thus, the block indexes for 205 and 215are different even if they are both the first blocks in their respectiveplanes. However, blocks 205 and 215 have the same indexes in die 235 asdo blocks 210 and 220 in die 240. Thus, the set of blocks need onlyspecify the indexes within a single die, and these indexes are appliedacross all die to create the superblock. In examples where blockindexing restarts within a plane, then the superblock may be specifiedby a single index and a set of planes. Also, as illustrated, eachsuperblock 245 and 250 has at most one block given a unique combinationof die and plane, although other examples can include multiple blocksper plane.

FIG. 3 illustrates an example of variable width superblocks, superblockA 305 and superblock B 310. Here, each superblock A 305 and superblock B310 has a width of two. Superblock A 305 comprises blocks from the lowerorder planes 315 (shaded) across DIE 0 325 and DIE 1330. Superblock B310 comprises blocks from higher order planes 320 across DIE 0 325 andDIE 1330. The illustrated examples are of half-width (e.g., 50%)superblocks.

FIG. 4 illustrates an example of writing to a variable width superblock.The superblock 415 (comprising blocks within the dashed line) is writtento by providing a single (e.g., the same) write command 420 to DIE 0 405and DIE 1410, while providing block specific data segments 425. The dieperform the write 420 in parallel (although the write for each block inDIE 0 405, for example, may be serial).

FIG. 5 illustrates a flowchart of a method 500 for variable widthsuperblock addressing. The operations of the method 500 are performed onelectronic hardware, such as that described herein (e.g., circuitry).

At operation 505, a superblock width is obtained (e.g., retrieved orreceived). In an example, the width is specified in number of planes. Inan example, the number of planes are specified as a percentage. In anexample, the percentage is fifty percent.

In an example, the number of planes is less than planes in a die. In anexample, a complete superblock includes a block at a unique index forevery plane in the die and spans all die of a device. In an example,user data is stored in a complete superblock and device meta data isstored in the superblock.

In an example, the superblock is one of a set of superblocks. In anexample, the set of superblocks includes a block at a unique index forevery plane in the die across all die of a device. In an example, thesuperblock is differentiated from other members in the set ofsuperblocks by a position of planes represented in the set of blocks. Inan example, the set of superblocks has two members and the position ofplanes is high or low. Here, high corresponds to one half of the planeswith high indices and low corresponds to remaining planes on the die.

At operation 510, a superblock entry is created in a translation table.In an example, the superblock entry including a set of blocks from thedevice. Here the set of blocks have block indexes that are the sameacross multiple die of the device, with a number of unique block indexesequal to the number of planes and in different planes.

At operation 515, a request is received from a requesting entity. In anexample, the request is a write. In an example, the request is a read.In an example, the request is a refresh. In an example, the request isgarbage collection.

At operation 520, the request is performed using the superblock entry toproduce a result. To perform the request, a single instruction tomultiple die of the device and multiple data segments are provided.Here, a data segment in the multiple data segments corresponds to ablock in the set of blocks specified by a tuple of block index and die.

At operation 525, the result is returned to the requesting entity.

FIG. 6 illustrates a block diagram of an example machine 600 upon whichany one or more of the techniques (e.g., methodologies) discussed hereincan perform. In alternative embodiments, the machine 600 can operate asa standalone device or can be connected (e.g., networked) to othermachines. In a networked deployment, the machine 600 can operate in thecapacity of a server machine, a client machine, or both in server-clientnetwork environments. In an example, the machine 600 can act as a peermachine in peer-to-peer (P2P) (or other distributed) networkenvironment. The machine 600 can be a personal computer (PC), a tabletPC, a set-top box (STB), a personal digital assistant (PDA), a mobiletelephone, a web appliance, an IoT device, automotive system, or anymachine capable of executing instructions (sequential or otherwise) thatspecify actions to be taken by that machine. Further, while only asingle machine is illustrated, the term “machine” shall also be taken toinclude any collection of machines that individually or jointly executea set (or multiple sets) of instructions to perform any one or more ofthe methodologies discussed herein, such as cloud computing, software asa service (SaaS), other computer cluster configurations.

Examples, as described herein, can include, or can operate by, logic,components, devices, packages, or mechanisms. Circuitry is a collection(e.g., set) of circuits implemented in tangible entities that includehardware (e.g., simple circuits, gates, logic, etc.). Circuitrymembership can be flexible over time and underlying hardwarevariability. Circuitries include members that can, alone or incombination, perform specific tasks when operating. In an example,hardware of the circuitry can be immutably designed to carry out aspecific operation (e.g., hardwired). In an example, the hardware of thecircuitry can include variably connected physical components (e.g.,execution units, transistors, simple circuits, etc.) including acomputer readable medium physically modified (e.g., magnetically,electrically, moveable placement of invariant massed particles, etc.) toencode instructions of the specific operation. In connecting thephysical components, the underlying electrical properties of a hardwareconstituent are changed, for example, from an insulator to a conductoror vice versa. The instructions enable participating hardware (e.g., theexecution units or a loading mechanism) to create members of thecircuitry in hardware via the variable connections to carry out portionsof the specific tasks when in operation. Accordingly, the computerreadable medium is communicatively coupled to the other components ofthe circuitry when the device is operating. In an example, any of thephysical components can be used in more than one member of more than onecircuitry. For example, under operation, execution units can be used ina first circuit of a first circuitry at one point in time and reused bya second circuit in the first circuitry, or by a third circuit in asecond circuitry at a different time.

The machine (e.g., computer system) 600 (e.g., the host device 105, thememory device 110, etc.) can include a hardware processor 602 (e.g., acentral processing unit (CPU), a graphics processing unit (GPU), ahardware processor core, or any combination thereof, such as the memorycontroller 115, etc.), a main memory 604 and a static memory 606, someor all of which can communicate with each other via an interlink (e.g.,bus) 608. The machine 600 can further include a display unit 610, analphanumeric input device 612 (e.g., a keyboard), and a user interface(UI) navigation device 614 (e.g., a mouse). In an example, the displayunit 610, input device 612 and UI navigation device 614 can be a touchscreen display. The machine 600 can additionally include a storagedevice (e.g., drive unit) 621, a signal generation device 618 (e.g., aspeaker), a network interface device 620, and one or more sensors 616,such as a global positioning system (GPS) sensor, compass,accelerometer, or other sensor. The machine 600 can include an outputcontroller 628, such as a serial (e.g., universal serial bus (USB),parallel, or other wired or wireless (e.g., infrared (IR), near fieldcommunication (NFC), etc.) connection to communicate or control one ormore peripheral devices (e.g., a printer, card reader, etc.).

The storage device 621 can include a machine readable medium 622 onwhich is stored one or more sets of data structures or instructions 624(e.g., software) embodying or utilized by any one or more of thetechniques or functions described herein. The instructions 624 can alsoreside, completely or at least partially, within the main memory 604,within static memory 606, or within the hardware processor 602 duringexecution thereof by the machine 600. In an example, one or anycombination of the hardware processor 602, the main memory 604, thestatic memory 606, or the storage device 621 can constitute the machinereadable medium 622.

While the machine readable medium 622 is illustrated as a single medium,the term “machine readable medium” can include a single medium ormultiple media (e.g., a centralized or distributed database, orassociated caches and servers) configured to store the one or moreinstructions 624.

The term “machine readable medium” can include any medium that iscapable of storing, encoding, or carrying instructions for execution bythe machine 600 and that cause the machine 600 to perform any one ormore of the techniques of the present disclosure, or that is capable ofstoring, encoding or carrying data structures used by or associated withsuch instructions. Non-limiting machine readable medium examples caninclude solid-state memories, and optical and magnetic media. In anexample, a massed machine readable medium comprises a machine-readablemedium with a plurality of particles having invariant (e.g., rest) mass.Accordingly, massed machine-readable media are not transitorypropagating signals. Specific examples of massed machine readable mediacan include: non-volatile memory, such as semiconductor memory devices(e.g., Electrically Programmable Read-Only Memory (EPROM), ElectricallyErasable Programmable Read-Only Memory (EEPROM)) and flash memorydevices; magnetic disks, such as internal hard disks and removabledisks; magneto-optical disks; and CD-ROM and DVD-ROM disks.

The instructions 624 (e.g., software, programs, an operating system(OS), etc.) or other data are stored on the storage device 621, can beaccessed by the memory 604 for use by the processor 602. The memory 604(e.g., DRAM) is typically fast, but volatile, and thus a different typeof storage than the storage device 621 (e.g., an SSD), which is suitablefor long-term storage, including while in an “off” condition. Theinstructions 624 or data in use by a user or the machine 600 aretypically loaded in the memory 604 for use by the processor 602. Whenthe memory 604 is full, virtual space from the storage device 621 can beallocated to supplement the memory 604; however, because the storage 621device is typically slower than the memory 604, and write speeds aretypically at least twice as slow as read speeds, use of virtual memorycan greatly reduce user experience due to storage device latency (incontrast to the memory 604, e.g., DRAM). Further, use of the storagedevice 621 for virtual memory can greatly reduce the usable lifespan ofthe storage device 621.

In contrast to virtual memory, virtual memory compression (e.g., theLinux® kernel feature “ZRAM”) uses part of the memory as compressedblock storage to avoid paging to the storage device 621. Paging takesplace in the compressed block until it is necessary to write such datato the storage device 621. Virtual memory compression increases theusable size of memory 604, while reducing wear on the storage device621.

Storage devices optimized for mobile electronic devices, or mobilestorage, traditionally include MMC solid-state storage devices (e.g.,micro Secure Digital (microSD™) cards, etc.). MMC devices include anumber of parallel interfaces (e.g., an 8-bit parallel interface) with ahost device, and are often removable and separate components from thehost device. In contrast, eMMC™ devices are attached to a circuit boardand considered a component of the host device, with read speeds thatrival serial ATA™ (Serial AT (Advanced Technology) Attachment, or SATA)based SSD devices. However, demand for mobile device performancecontinues to increase, such as to fully enable virtual oraugmented-reality devices, utilize increasing networks speeds, etc. Inresponse to this demand, storage devices have shifted from parallel toserial communication interfaces. Universal Flash Storage (UFS) devices,including controllers and firmware, communicate with a host device usinga low-voltage differential signaling (LVDS) serial interface withdedicated read/write paths, further advancing greater read/write speeds.

The instructions 624 can further be transmitted or received over acommunications network 626 using a transmission medium via the networkinterface device 620 utilizing any one of a number of transfer protocols(e.g., frame relay, internet protocol (IP), transmission controlprotocol (TCP), user datagram protocol (UDP), hypertext transferprotocol (HTTP), etc.). Example communication networks can include alocal area network (LAN), a wide area network (WAN), a packet datanetwork (e.g., the Internet), mobile telephone networks (e.g., cellularnetworks), Plain Old Telephone (POTS) networks, and wireless datanetworks (e.g., Institute of Electrical and Electronics Engineers (IEEE)802.11 family of standards known as Wi-Fi®, IEEE 802.16 family ofstandards known as WiMax®), IEEE 802.15.4 family of standards,peer-to-peer (P2P) networks, among others. In an example, the networkinterface device 620 can include one or more physical jacks (e.g.,Ethernet, coaxial, or phone jacks) or one or more antennas to connect tothe communications network 626. In an example, the network interfacedevice 620 can include a plurality of antennas to wirelessly communicateusing at least one of single-input multiple-output (SIMO),multiple-input multiple-output (MIMO), or multiple-input single-output(MISO) techniques. The term “transmission medium” shall be taken toinclude any intangible medium that is capable of storing, encoding orcarrying instructions for execution by the machine 600, and includesdigital or analog communications signals or other intangible medium tofacilitate communication of such software.

Additional Examples

Example 1 is a NAND device for variable width superblock addressing inNAND, the NAND device comprising: A NAND array; and a controller to:obtain a superblock width specified in number of planes; create asuperblock entry in a translation table of the NAND device, thesuperblock entry including a set of blocks from the NAND array, the setof blocks having block indexes that are the same across multiple die ofthe NAND array, with a number of unique block indexes equal to thenumber of planes and in different planes; receive a request from arequesting entity; perform the request, to produce a result, using thesuperblock entry through: a single instruction to multiple die of theNAND device; and multiple data segments, a data segment in the multipledata segments corresponding to a block in the set of blocks specified bya tuple of block index and die; and return the result to the requestingentity.

In Example 2, the subject matter of Example 1 includes, wherein thenumber of planes are specified as a percentage.

In Example 3, the subject matter of Example 2 includes, wherein thepercentage is fifty percent.

In Example 4, the subject matter of Examples 1-3 includes, wherein thenumber of planes is less than planes in a die of the NAND array.

In Example 5, the subject matter of Example 4 includes, wherein acomplete superblock includes a block at a unique index for every planein the die and spans all die of the NAND array.

In Example 6, the subject matter of Example 5 includes, wherein userdata is stored in a complete superblock and NAND device meta data isstored in the superblock.

In Example 7, the subject matter of Examples 4-6 includes, wherein thesuperblock is one of a set of superblocks, the set of superblocksincluding a block at a unique index for every plane in the die acrossall die of the NAND array.

In Example 8, the subject matter of Example 7 includes, wherein thesuperblock is differentiated from other members in the set ofsuperblocks by a position of planes represented in the set of blocks.

In Example 9, the subject matter of Example 8 includes, wherein the setof superblocks has two members and the position of planes is high orlow, high corresponding to one half of the planes with high indices andlow corresponding to remaining planes on the die.

In Example 10, the subject matter of Examples 1-9 includes, wherein therequest is a write.

In Example 11, the subject matter of Examples 1-10 includes, wherein therequest is a read.

In Example 12, the subject matter of Examples 1-11 includes, wherein therequest is a refresh.

In Example 13, the subject matter of Examples 1-12 includes, wherein therequest is garbage collection.

Example 14 is a method for variable width superblock addressing in NAND,the method comprising: obtaining a superblock width specified in numberof planes; creating a superblock entry in a translation table of a NANDdevice, the superblock entry including a set of blocks from the NANDdevice, the set of blocks having block indexes that are the same acrossmultiple die of the NAND device, with a number of unique block indexesequal to the number of planes and in different planes; receiving arequest from a requesting entity; performing the request, to produce aresult, using the superblock entry by providing: a single instruction tomultiple die of the NAND device; and multiple data segments, a datasegment in the multiple data segments corresponding to a block in theset of blocks specified by a tuple of block index and die; and returningthe result to the requesting entity.

In Example 15, the subject matter of Example 14 includes, wherein thenumber of planes are specified as a percentage.

In Example 16, the subject matter of Example 15 includes, wherein thepercentage is fifty percent.

In Example 17, the subject matter of Examples 14-16 includes, whereinthe number of planes is less than planes in a die of the NAND device.

In Example 18, the subject matter of Example 17 includes, wherein acomplete superblock includes a block at a unique index for every planein the die and spans all die of the NAND device.

In Example 19, the subject matter of Example 18 includes, wherein userdata is stored in a complete superblock and NAND device meta data isstored in the superblock.

In Example 20, the subject matter of Examples 17-19 includes, whereinthe superblock is one of a set of superblocks, the set of superblocksincluding a block at a unique index for every plane in the die acrossall die of the NAND device.

In Example 21, the subject matter of Example 20 includes, wherein thesuperblock is differentiated from other members in the set ofsuperblocks by a position of planes represented in the set of blocks.

In Example 22, the subject matter of Example 21 includes, wherein theset of superblocks has two members and the position of planes is high orlow, high corresponding to one half of the planes with high indices andlow corresponding to remaining planes on the die.

In Example 23, the subject matter of Examples 14-22 includes, whereinthe request is a write.

In Example 24, the subject matter of Examples 14-23 includes, whereinthe request is a read.

In Example 25, the subject matter of Examples 14-24 includes, whereinthe request is a refresh.

In Example 26, the subject matter of Examples 14-25 includes, whereinthe request is garbage collection.

Example 27 is at least one machine readable medium includinginstructions that, when executed by a machine, cause the machine toperform any method of Examples 14-26.

Example 28 is a system comprising means to perform any method ofExamples 14-26.

Example 29 is a machine readable medium including instructions forvariable width superblock addressing in NAND, the instructions, whenexecuted by a machine, cause the machine to perform operationscomprising: obtaining a superblock width specified in number of planes;creating a superblock entry in a translation table of a NAND device, thesuperblock entry including a set of blocks from the NAND device, the setof blocks having block indexes that are the same across multiple die ofthe NAND device, with a number of unique block indexes equal to thenumber of planes and in different planes; receiving a request from arequesting entity; performing the request, to produce a result, usingthe superblock entry by providing: a single instruction to multiple dieof the NAND device; and multiple data segments, a data segment in themultiple data segments corresponding to a block in the set of blocksspecified by a tuple of block index and die; and returning the result tothe requesting entity.

In Example 30, the subject matter of Example 29 includes, wherein thenumber of planes are specified as a percentage.

In Example 31, the subject matter of Example 30 includes, wherein thepercentage is fifty percent.

In Example 32, the subject matter of Examples 29-31 includes, whereinthe number of planes is less than planes in a die of the NAND device.

In Example 33, the subject matter of Example 32 includes, wherein acomplete superblock includes a block at a unique index for every planein the die and spans all die of the NAND device.

In Example 34, the subject matter of Example 33 includes, wherein userdata is stored in a complete superblock and NAND device meta data isstored in the superblock.

In Example 35, the subject matter of Examples 32-34 includes, whereinthe superblock is one of a set of superblocks, the set of superblocksincluding a block at a unique index for every plane in the die acrossall die of the NAND device.

In Example 36, the subject matter of Example 35 includes, wherein thesuperblock is differentiated from other members in the set ofsuperblocks by a position of planes represented in the set of blocks.

In Example 37, the subject matter of Example 36 includes, wherein theset of superblocks has two members and the position of planes is high orlow, high corresponding to one half of the planes with high indices andlow corresponding to remaining planes on the die.

In Example 38, the subject matter of Examples 29-37 includes, whereinthe request is a write.

In Example 39, the subject matter of Examples 29-38 includes, whereinthe request is a read.

In Example 40, the subject matter of Examples 29-39 includes, whereinthe request is a refresh.

In Example 41, the subject matter of Examples 29-40 includes, whereinthe request is garbage collection.

Example 42 is a system for variable width superblock addressing in NAND,the system comprising: means for obtaining a superblock width specifiedin number of planes; means for creating a superblock entry in atranslation table of a NAND device, the superblock entry including a setof blocks from the NAND device, the set of blocks having block indexesthat are the same across multiple die of the NAND device, with a numberof unique block indexes equal to the number of planes and in differentplanes; means for receiving a request from a requesting entity; meansfor performing the request, to produce a result, using the superblockentry by providing: a single instruction to multiple die of the NANDdevice; and multiple data segments, a data segment in the multiple datasegments corresponding to a block in the set of blocks specified by atuple of block index and die; and means for returning the result to therequesting entity.

In Example 43, the subject matter of Example 42 includes, wherein thenumber of planes are specified as a percentage.

In Example 44, the subject matter of Example 43 includes, wherein thepercentage is fifty percent.

In Example 45, the subject matter of Examples 42-44 includes, whereinthe number of planes is less than planes in a die of the NAND device.

In Example 46, the subject matter of Example 45 includes, wherein acomplete superblock includes a block at a unique index for every planein the die and spans all die of the NAND device.

In Example 47, the subject matter of Example 46 includes, wherein userdata is stored in a complete superblock and NAND device meta data isstored in the superblock.

In Example 48, the subject matter of Examples 45-47 includes, whereinthe superblock is one of a set of superblocks, the set of superblocksincluding a block at a unique index for every plane in the die acrossall die of the NAND device.

In Example 49, the subject matter of Example 48 includes, wherein thesuperblock is differentiated from other members in the set ofsuperblocks by a position of planes represented in the set of blocks.

In Example 50, the subject matter of Example 49 includes, wherein theset of superblocks has two members and the position of planes is high orlow, high corresponding to one half of the planes with high indices andlow corresponding to remaining planes on the die.

In Example 51, the subject matter of Examples 42-50 includes, whereinthe request is a write.

In Example 52, the subject matter of Examples 42-51 includes, whereinthe request is a read.

In Example 53, the subject matter of Examples 42-52 includes, whereinthe request is a refresh.

In Example 54, the subject matter of Examples 42-53 includes, whereinthe request is garbage collection.

Example 55 is at least one machine-readable medium includinginstructions that, when executed by processing circuitry, cause theprocessing circuitry to perform operations to implement of any ofExamples 1-54.

Example 56 is an apparatus comprising means to implement of any ofExamples 1-54.

Example 57 is a system to implement of any of Examples 1-54.

Example 58 is a method to implement of any of Examples 1-54.

The above detailed description includes references to the accompanyingdrawings, which form a part of the detailed description. The drawingsshow, by way of illustration, specific embodiments in which theinvention can be practiced. These embodiments are also referred toherein as “examples”. Such examples can include elements in addition tothose shown or described. However, the present inventors alsocontemplate examples in which only those elements shown or described areprovided. Moreover, the present inventors also contemplate examplesusing any combination or permutation of those elements shown ordescribed (or one or more aspects thereof), either with respect to aparticular example (or one or more aspects thereof), or with respect toother examples (or one or more aspects thereof) shown or describedherein.

In this document, the terms “a” or “an” are used, as is common in patentdocuments, to include one or more than one, independent of any otherinstances or usages of “at least one” or “one or more.” In thisdocument, the term “or” is used to refer to a nonexclusive or, such that“A or B” can include “A but not B,” “B but not A,” and “A and B,” unlessotherwise indicated. In the appended claims, the terms “including” and“in which” are used as the plain-English equivalents of the respectiveterms “comprising” and “wherein”. Also, in the following claims, theterms “including” and “comprising” are open-ended, that is, a system,device, article, or process that includes elements in addition to thoselisted after such a term in a claim are still deemed to fall within thescope of that claim. Moreover, in the following claims, the terms“first,” “second,” and “third,” etc. are used merely as labels, and arenot intended to impose numerical requirements on their objects.

In various examples, the components, controllers, processors, units,engines, or tables described herein can include, among other things,physical circuitry or firmware stored on a physical device. As usedherein, “processor” means any type of computational circuit such as, butnot limited to, a microprocessor, a microcontroller, a graphicsprocessor, a digital signal processor (DSP), or any other type ofprocessor or processing circuit, including a group of processors ormulti-core devices.

The term “horizontal” as used in this document is defined as a planeparallel to the conventional plane or surface of a substrate, such asthat underlying a wafer or die, regardless of the actual orientation ofthe substrate at any point in time. The term “vertical” refers to adirection perpendicular to the horizontal as defined above.Prepositions, such as “on,” “over,” and “under” are defined with respectto the conventional plane or surface being on the top or exposed surfaceof the substrate, regardless of the orientation of the substrate; andwhile “on” is intended to suggest a direct contact of one structurerelative to another structure which it lies “on” (in the absence of anexpress indication to the contrary); the terms “over” and “under” areexpressly intended to identify a relative placement of structures (orlayers, features, etc.), which expressly includes—but is not limitedto—direct contact between the identified structures unless specificallyidentified as such. Similarly, the terms “over” and “under” are notlimited to horizontal orientations, as a structure can be “over” areferenced structure if it is, at some point in time, an outermostportion of the construction under discussion, even if such structureextends vertically relative to the referenced structure, rather than ina horizontal orientation.

The terms “wafer” and “substrate” are used herein to refer generally toany structure on which integrated circuits are formed, and also to suchstructures during various stages of integrated circuit fabrication. Thefollowing detailed description is, therefore, not to be taken in alimiting sense, and the scope of the various embodiments is defined onlyby the appended claims, along with the full scope of equivalents towhich such claims are entitled.

Various embodiments according to the present disclosure and describedherein include memory utilizing a vertical structure of memory cells(e.g., NAND strings of memory cells). As used herein, directionaladjectives will be taken relative a surface of a substrate upon whichthe memory cells are formed (i.e., a vertical structure will be taken asextending away from the substrate surface, a bottom end of the verticalstructure will be taken as the end nearest the substrate surface and atop end of the vertical structure will be taken as the end farthest fromthe substrate surface).

As used herein, directional adjectives, such as horizontal, vertical,normal, parallel, perpendicular, etc., can refer to relativeorientations, and are not intended to require strict adherence tospecific geometric properties, unless otherwise noted. For example, asused herein, a vertical structure need not be strictly perpendicular toa surface of a substrate, but can instead be generally perpendicular tothe surface of the substrate, and can form an acute angle with thesurface of the substrate (e.g., between 60 and 120 degrees, etc.).

In some embodiments described herein, different doping configurationscan be applied to a source-side select gate (SGS), a control gate (CG),and a drain-side select gate (SGD), each of which, in this example, canbe formed of or at least include polysilicon, with the result such thatthese tiers (e.g., polysilicon, etc.) can have different etch rates whenexposed to an etching solution. For example, in a process of forming amonolithic pillar in a 3D semiconductor device, the SGS and the CG canform recesses, while the SGD can remain less recessed or even notrecessed. These doping configurations can thus enable selective etchinginto the distinct tiers (e.g., SGS, CG, and SGD) in the 3D semiconductordevice by using an etching solution (e.g., tetramethylammonium hydroxide(TMCH)).

Operating a memory cell, as used herein, includes reading from, writingto, or erasing the memory cell. The operation of placing a memory cellin an intended state is referred to herein as “programming,” and caninclude both writing to or erasing from the memory cell (e.g., thememory cell can be programmed to an erased state).

According to one or more embodiments of the present disclosure, a memorycontroller (e.g., a processor, controller, firmware, etc.) locatedinternal or external to a memory device, is capable of determining(e.g., selecting, setting, adjusting, computing, changing, clearing,communicating, adapting, deriving, defining, utilizing, modifying,applying, etc.) a quantity of wear cycles, or a wear state (e.g.,recording wear cycles, counting operations of the memory device as theyoccur, tracking the operations of the memory device it initiates,evaluating the memory device characteristics corresponding to a wearstate, etc.)

According to one or more embodiments of the present disclosure, a memoryaccess device can be configured to provide wear cycle information to thememory device with each memory operation. The memory device controlcircuitry (e.g., control logic) can be programmed to compensate formemory device performance changes corresponding to the wear cycleinformation. The memory device can receive the wear cycle informationand determine one or more operating parameters (e.g., a value,characteristic) in response to the wear cycle information.

It will be understood that when an element is referred to as being “on,”“connected to” or “coupled with” another element, it can be directly on,connected, or coupled with the other element or intervening elements canbe present. In contrast, when an element is referred to as being“directly on,” “directly connected to” or “directly coupled with”another element, there are no intervening elements or layers present. Iftwo elements are shown in the drawings with a line connecting them, thetwo elements can be either be coupled, or directly coupled, unlessotherwise indicated.

Method examples described herein can be machine or computer-implementedat least in part. Some examples can include a computer-readable mediumor machine-readable medium encoded with instructions operable toconfigure an electronic device to perform methods as described in theabove examples. An implementation of such methods can include code, suchas microcode, assembly language code, a higher-level language code, orthe like. Such code can include computer readable instructions forperforming various methods. The code can form portions of computerprogram products. Further, the code can be tangibly stored on one ormore volatile or non-volatile tangible computer-readable media, such asduring execution or at other times. Examples of these tangiblecomputer-readable media can include, but are not limited to, hard disks,removable magnetic disks, removable optical disks (e.g., compact discsand digital video disks), magnetic cassettes, memory cards or sticks,random access memories (RAMs), read only memories (ROMs), solid statedrives (SSDs), Universal Flash Storage (UFS) device, embedded MMC (eMMC)device, and the like.

The above description is intended to be illustrative, and notrestrictive. For example, the above-described examples (or one or moreaspects thereof) can be used in combination with each other. Otherembodiments can be used, such as by one of ordinary skill in the artupon reviewing the above description. It is submitted with theunderstanding that it will not be used to interpret or limit the scopeor meaning of the claims. Also, in the above Detailed Description,various features can be grouped together to streamline the disclosure.This should not be interpreted as intending that an unclaimed disclosedfeature is essential to any claim. Rather, inventive subject matter canlie in less than all features of a particular disclosed embodiment.Thus, the following claims are hereby incorporated into the DetailedDescription, with each claim standing on its own as a separateembodiment, and it is contemplated that such embodiments can be combinedwith each other in various combinations or permutations. The scope ofthe invention should be determined with reference to the appendedclaims, along with the full scope of equivalents to which such claimsare entitled.

The invention claimed is:
 1. A NAND device for variable width superblockaddressing in NAND, the NAND device comprising: A NAND array; and acontroller to: obtain a superblock width specified in number of planes;create a superblock entry in a translation table of the NAND device, thesuperblock entry including a set of blocks from the NAND array, the setof blocks having block indexes that are the same across multiple die ofthe NAND array, with a number of unique block indexes equal to thenumber of planes and in different planes; receive a request from arequesting entity; perform the request, to produce a result, using thesuperblock entry through: a single instruction to multiple die of theNAND device; and multiple data segments, a data segment in the multipledata segments corresponding to a block in the set of blocks specified bya tuple of block index and die; and return the result to the requestingentity.
 2. The NAND device of claim 1, wherein the number of planes arespecified as a percentage.
 3. The NAND device of claim 2, wherein thepercentage is fifty percent.
 4. The NAND device of claim 1, wherein thenumber of planes is less than planes in a die of the NAND array.
 5. TheNAND device of claim 4, wherein a complete superblock includes a blockat a unique index for every plane in the die and spans all die of theNAND array.
 6. The NAND device of claim 5, wherein user data is storedin a complete superblock and NAND device meta data is stored in thesuperblock.
 7. The NAND device of claim 4, wherein the superblock is oneof a set of superblocks, the set of superblocks including a block at aunique index for every plane in the die across all die of the NANDarray.
 8. The NAND device of claim 7, wherein the superblock isdifferentiated from other members in the set of superblocks by aposition of planes represented in the set of blocks.
 9. The NAND deviceof claim 8, wherein the set of superblocks has two members and theposition of planes is high or low, high corresponding to one half of theplanes with high indices and low corresponding to remaining planes onthe die.
 10. The NAND device of claim 1, wherein the request is one of awrite, a read, a refresh, or garbage collection.
 11. A method forvariable width superblock addressing in NAND, the method comprising:obtaining a superblock width specified in number of planes; creating asuperblock entry in a translation table of a NAND device, the superblockentry including a set of blocks from the NAND device, the set of blockshaving block indexes that are the same across multiple die of the NANDdevice, with a number of unique block indexes equal to the number ofplanes and in different planes; receiving a request from a requestingentity; performing the request, to produce a result, using thesuperblock entry by providing: a single instruction to multiple die ofthe NAND device; and multiple data segments, a data segment in themultiple data segments corresponding to a block in the set of blocksspecified by a tuple of block index and die; and returning the result tothe requesting entity.
 12. The method of claim 11, wherein the number ofplanes are specified as a percentage.
 13. The method of claim 12,wherein the percentage is fifty percent.
 14. The method of claim 11,wherein the number of planes is less than planes in a die of the NANDdevice.
 15. The method of claim 14, wherein a complete superblockincludes a block at a unique index for every plane in the die and spansall die of the NAND device.
 16. The method of claim 15, wherein userdata is stored in a complete superblock and NAND device meta data isstored in the superblock.
 17. The method of claim 14, wherein thesuperblock is one of a set of superblocks, the set of superblocksincluding a block at a unique index for every plane in the die acrossall die of the NAND device.
 18. The method of claim 17, wherein thesuperblock is differentiated from other members in the set ofsuperblocks by a position of planes represented in the set of blocks.19. The method of claim 18, wherein the set of superblocks has twomembers and the position of planes is high or low, high corresponding toone half of the planes with high indices and low corresponding toremaining planes on the die.
 20. The method of claim 11, wherein therequest is one of a write, a read, a refresh, or garbage collection. 21.A non-transitory machine readable medium including instructions forvariable width superblock addressing in NAND, the instructions, whenexecuted by a machine, cause the machine to perform operationscomprising: obtaining a superblock width specified in number of planes;creating a superblock entry in a translation table of a NAND device, thesuperblock entry including a set of blocks from the NAND device, the setof blocks having block indexes that are the same across multiple die ofthe NAND device, with a number of unique block indexes equal to thenumber of planes and in different planes; receiving a request from arequesting entity; performing the request, to produce a result, usingthe superblock entry by providing: a single instruction to multiple dieof the NAND device; and multiple data segments, a data segment in themultiple data segments corresponding to a block in the set of blocksspecified by a tuple of block index and die; and returning the result tothe requesting entity.
 22. The non-transitory machine readable medium ofclaim 21, wherein the number of planes are specified as a percentage.23. The non-transitory machine readable medium of claim 22, wherein thepercentage is fifty percent.
 24. The non-transitory machine readablemedium of claim 21, wherein the number of planes is less than planes ina die of the NAND device.
 25. The non-transitory machine readable mediumof claim 24, wherein a complete superblock includes a block at a uniqueindex for every plane in the die and spans all die of the NAND device.26. The non-transitory machine readable medium of claim 25, wherein userdata is stored in a complete superblock and NAND device meta data isstored in the superblock.
 27. The non-transitory machine readable mediumof claim 24, wherein the superblock is one of a set of superblocks, theset of superblocks including a block at a unique index for every planein the die across all die of the NAND device.
 28. The non-transitorymachine readable medium of claim 27, wherein the superblock isdifferentiated from other members in the set of superblocks by aposition of planes represented in the set of blocks.
 29. Thenon-transitory machine readable medium of claim 28, wherein the set ofsuperblocks has two members and the position of planes is high or low,high corresponding to one half of the planes with high indices and lowcorresponding to remaining planes on the die.
 30. The non-transitorymachine readable medium of claim 21, wherein the request is one of awrite, a read, a refresh, or garbage collection.